GNNT130170-42B is a broadband high-power amplifier chip, fabricated using GaN HEMT technology. Its operating frequency range is from 13GHz to 17GHz. The chip is powered by dual power supplies, with a typical operating voltage of VD = +28V and IDQ = 230mA. It offers a small-signal gain of 27dB and a saturated output power of 16W, while maintaining a 38% drain efficiency. 

Features 

•Frequency range: 13 - 17 GHz 

•Saturated output power: 16W (42dBm) 

•Saturation gain: 22 dB 

•Saturation additional efficiency: 38% 

•Operating voltage: 28V 

•Chip size: 1.8 × 3.3 × 0.1 mm 

•Support CW / Pulse operation