PRODUCT
Product Center
GaN RF Transistor
GaN Internal Matching PA
GaN RF PA MMIC
5G Full Integrated PA Module
GNNT6044H
Mode : CW
GNNT4048H
Mode : CW
GNNT6051HP
Mode : CW
GNNT3054HP
Mode : CW
GNHT4043HP
Mode : CW
GNHT4047HP
Mode : CW
GNHT3055H
Mode : CW
GNHT1559H
Mode : CW
Learn More→
GNNT2060-45M
2000MHz–6000MHz, 30W, 28V, GaN Internal Matching PA
GNNT2839-44M
2800MHz–3900MHz, 25W, 28V, GaN Internal Matching PA
GNNT3745-48M
3700MHz–4500MHz, 60W, 28V, GaN Internal Matching PA
GNNT4450-40M
3700MHz–4500MHz, 60W, 28V, GaN Internal Matching PA
GNNT2735-40M
3700MHz–4500MHz, 60W, 28V, GaN Internal Matching PA
Learn More→
GNNT1765-45B
1.7GHz–6.5GHz, 30W, 28V, GaN RF PA MMIC
GNNT130170-42B
13GHz–17GHz 16W 28V GaN RF PA MMIC
GNNT60180-42B
1.7GHz–6.5GHz, 30W, 28V, GaN RF PA MMIC
Learn More→
GNNM4945LA
35W, 28V, 4.4–5.0 GHz GaN PA Module
GNHM4949LN
80 W, 48 V, 4.8–5.0 GHz GaN PA Module
GNHM4948LS
60 W, 48 V, 4.4–5.0 GHz GaN PA Module
GNHM3549LN
80 W, 48 V, 3.3–3.6 GHz GaN PA Module
GNNM3542LN
15 W, 28 V, 3.3–3.6 GHz GaN PA Module
GNNM2642LE
15 W, 28 V, 2.5–2.7 GHz GaN PA Module
INTRODUCTION
Company Profile
Gaxtrem is a supplier of gallium nitride RF front-end chips. It is dedicated to independently developing gallium nitride RF chips for applications in the wireless microwave RF field. Its product range includes GaN RF power tubes, GaN internal matching power amplifiers, GaN MMICs and 5G fully integrated power amplification modules. The application fields cover intelligent communications, low-altitude economy, and multiple application markets.
The company's headquarters is located in Suzhou City, Jiangsu Province, and it encompasses several independent laboratories. The company's technical and operational teams have been deeply engaged in the semiconductor industry for many years. Their core technologies originated from Tsinghua University. Adhering to the concept of technological excellence, based on advanced processes such as GaN, they have developed high-performance RF chips with independent intellectual property rights, achieving coordinated optimization of efficiency and linearity, and achieving comprehensive improvements in performance, cost, size, etc., significantly enhancing the competitiveness of the customer's system products. The company has set up R&D and sales teams in Beijing and an office in Shenzhen.
APPLICATION
Application Areas
Smart Communications
Gallium Nitride (GaN) RF power devices, as the core component of the third-generation semiconductors, have outstanding performance such as high frequency, high power density, high efficiency, and high temperature resistance. They have become the key support for the new generation of communication infrastructure and are widely applied in two core fields: satellite internet communication and 6G communication.
Learn More→
Low-Altitude Economy
Gallium Nitride (GaN) RF power devices, as the core component of the third-generation semiconductors, with their outstanding features such as high power density, high efficiency, and wide frequency band, deeply adapt to the development needs of the low-altitude economy. They play a key supporting role in two core scenarios: anti-attack of unmanned aircraft and low-altitude intelligent IoT interconnection, helping to promote the safe and efficient development of the low-altitude economy.
Multi-Market Applications
Gallium Nitride (GaN) RF power devices, as the core component of the third-generation semiconductors, with their outstanding features such as high power density, high efficiency, and wide bandwidth, have greatly enhanced various fields. They play an irreplaceable supporting role in phased array radars and RF energy, and contribute to technological breakthroughs and efficiency upgrades in the industry.
Learn More→
Smart Communications
Low-Altitude Economy
Multi-Market Applications
HONORS
Honors & Qualifications
Honorary Certificates
Invention Patents
Gaxtrem
GR202332017743
5G communication gallium nitride power amplifier chip
HJICIE202009000005
Su Minke Enterprise Certificate
20230232052026081500796
RF front-end based on G-class power amplifier architecture
ZL 2023 10168581.9
A parallel differential power amplifier
ZL 2023 10138850.7
The input matching circuit of the radio frequency power amplifier and the radio frequency power amplifier
71. 2022 2 0496682.X
Broadband Integrated Doherty Power Amplifier Based on Low-Q Output Network
ZL 2020 1 0427902.9
Broadband Integrated Doherty Power Amplifier Based on Low-Q Output Network
ZL 2020 1 0427902.9
Broadband integrated Doherty power amplifier based on low-Q output network A broadband integrated dual-frequency Doherty power amplifier, base station and mobile terminal
ZL 2020 1 0392270.7
A power amplifier module and a radio frequency power amplifier
ZL 2022 2 3302208.8
RF front-end, RF circuit and chip based on post-matching architecture
ZL 2023 1 0153682.9
RF front-end based on coupled lines
ZL202410919446.8
A deep-decay range Doherty power amplifier
ZL202310921242.3
RF front-end based on G-class power amplifier architecture
ZL202310168581.9
A gallium nitride RF switch structure and a communication base station
ZL202211444138.1
A gallium nitride RF switch structure and a communication base station
ZL202211444138.1
A gallium nitride RF switch structure and a communication base station
ZL202211444138.1
A gallium nitride RF switch structure and a power amplifier module and RF power amplifier for a communication base station
ZL 2022 2 3302208.8
Input matching circuit of radio frequency power amplifier and radio frequency power amplifier:
ZL 2022 2 0496682.X
A linearization-enhancing Doherty power amplifier based on phase mismatch
ZL.2021 1 0985061.8
Doherty power amplifier based on white adaptation bias
Z1.2022 1 0180628.9
A gallium nitride RF switch structure and a communication base station
ZL 2022 1 1444138.1
A deep-decay range Doherty power amplifier
ZL 2023 10921242.3
Broadband chip capacitors, integrated circuit chips and power amplifiers based on SLCC
ZL 2023 2 1526050.4
RF front-end based on G-class power amplifier architecture
ZL 2023 10168581.9
A parallel differential power amplifier
ZL 2023 10138850.7
The input matching circuit of the radio frequency power amplifier and the radio frequency power amplifier
71. 2022 2 0496682.X
Broadband Integrated Doherty Power Amplifier Based on Low-Q Output Network
ZL 2020 1 0427902.9
Broadband Integrated Doherty Power Amplifier Based on Low-Q Output Network
ZL 2020 1 0427902.9
Broadband integrated Doherty power amplifier based on low-Q output network A broadband integrated dual-frequency Doherty power amplifier, base station and mobile terminal
ZL 2020 1 0392270.7
A power amplifier module and a radio frequency power amplifier
ZL 2022 2 3302208.8
RF front-end, RF circuit and chip based on post-matching architecture
ZL 2023 1 0153682.9
RF front-end based on coupled lines
ZL202410919446.8
A deep-decay range Doherty power amplifier
ZL202310921242.3
RF front-end based on G-class power amplifier architecture
ZL202310168581.9
A gallium nitride RF switch structure and a communication base station
ZL202211444138.1
A gallium nitride RF switch structure and a communication base station
ZL202211444138.1
A gallium nitride RF switch structure and a communication base station
ZL202211444138.1
A gallium nitride RF switch structure and a power amplifier module and RF power amplifier for a communication base station
ZL 2022 2 3302208.8
Input matching circuit of radio frequency power amplifier and radio frequency power amplifier:
ZL 2022 2 0496682.X
A linearization-enhancing Doherty power amplifier based on phase mismatch
ZL.2021 1 0985061.8
Doherty power amplifier based on white adaptation bias
Z1.2022 1 0180628.9
A gallium nitride RF switch structure and a communication base station
ZL 2022 1 1444138.1
A deep-decay range Doherty power amplifier
ZL 2023 10921242.3
Broadband chip capacitors, integrated circuit chips and power amplifiers based on SLCC
ZL 2023 2 1526050.4
Progress
Development History
2019year
The company was established; the angel round of financing was completed.
2020year
The first product has been taped out; the Pre-A round of financing has been completed.
2021year
Suzhou company was established; ISO9001 certification was completed; A round of financing was accomplished
2022year
The communication application products have achieved mass production; GJB9001 certification has been completed, and the A+ round of financing has been accomplished.
2023year
The unmanned aerial vehicle countermeasure application products have achieved mass production; awarded as a leading talent in innovation and entrepreneurship of Gu Suzhou
2024year
Break through the bottleneck and empower low-altitude intelligent Internet of Things.
2025year
Received the First Prize for Scientific and Technological Progress in the Field of Electronics from the Chinese Institute of Electronics; Completed the A++ round of financing